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HomeElectronicsExcessive-Efficiency 1200V MOSFETs For Various Purposes

Excessive-Efficiency 1200V MOSFETs For Various Purposes


The 1200V MOSFETs improve energy expertise for functions like electrical automobile charging, vitality storage, and industrial energy provides, making certain effectivity and reliability.

MOSFETs

SemiQ has just lately expanded its QSiC Silicon Carbide module portfolio by introducing a brand new household of 1200V MOSFETs, accessible with or with out 1200V SiC Schottky Diodes in a SOT-227 package deal. The corporate claims that the SiC modules, constituted of high-performance ceramics, are designed to ship dependable efficiency below harsh situations. They boast options like excessive breakdown voltage, high-temperature operation, low Rds(On) shift throughout the working temperature vary, and distinctive gate oxide stability and ruggedness.

The modules are suited to numerous functions, together with electrical automobile charging, DC-DC converters, vitality storage methods, and energy provides in medical, photo voltaic, wind vitality, and knowledge centre sectors.

The design is characterised by low switching losses and minimal junction-to-case thermal resistance, making certain environment friendly operation. It’s notably rugged and designed for straightforward mounting. Moreover, it permits for direct help to a heatsink, due to its remoted package deal, enhancing its practicality and ease of use.

The high-speed switching SiC MOSFETs characteristic a Kelvin reference, making certain secure operation. These parts are additionally easy to drive, combining superior pace capabilities with user-friendly operation.

To make sure top-notch high quality, all QSiC modules bear rigorous wafer-level gate burn-in testing for gate oxide stability and different stress checks like gate stress and high-temperature reverse bias drain stress. These procedures are important for assembly industrial-grade high quality requirements.

Among the key specs of the modules embody:

  • Drain-Supply Voltage: 1200V
  • Steady Drain Present: 81-113A
  • Physique Diode Drain Present: 97A
  • Pulsed Drain Present: 250A
  • Energy Dissipation: 395W
  • Working & Storage Temperature: -55…175 °C

Dr. Timothy Han, President at SemiQ, mentioned, “We’re delighted with the shopper enter and wishes for our new household of QSiC™ high-power modules and thank our SemiQ workforce, who’ve labored tirelessly to construct and qualify our newest QSiC™ modules.”

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